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This document contains the following sections: Product License (XFORCE), The present invention relates to a sensor using a semiconductor and, more particularly, to a sensor capable of detecting the concentration of a trace component which is contained in a specific target gas in a measurement gas mixed in air or in a specific sample gas contained in a sample gas to determine the concentration thereof.
As one conventional method for detecting the concentration of a trace component which is contained in a specific target gas in a measurement gas mixed in air, a method is known wherein a gas diffusion electrode which is formed of a polycrystalline semiconductor is disposed on the surface of a semiconductor substrate for example of silicon, a voltage is applied to the electrode to induce an electric current in the semiconductor substrate through a tunneling phenomenon to measure the potential distribution of the electric current at the part for sensing the trace component which is contained in the measurement gas (see, for example, Hiroki Ishihara et al, IEEE TRANSACTION ON ELECTRON DEVICES, Vol. ED-30, No. 9, September 1983, pages 1041 to 1044).
In this method, if the reference electrode provided with the reference electrode is formed using a polycrystalline semiconductor of the same semiconductor substrate used for the gas diffusion electrode, i.e. if the two electrodes are formed on the same semiconductor substrate, it is possible to directly use the potential distribution of an electric current flowing in the gas diffusion electrode as the potential distribution of an electric current flowing in the reference electrode to thereby set the potential distribution of the electric current flowing in the reference electrode (i.e. the reference potential) in conformity with the potential distribution of the electric current flowing in the gas diffusion electrode.
As another conventional method, there is a method wherein a polycrystalline semiconductor and a monocrystalline semiconductor are used to form two electrodes and then, only one of the two electrodes is formed by using the polycrystalline semiconductor (see, for example, Hidekazu Ohnuma et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, Vol. SC-15, No. 6, pages 955 to 960).
In this method, it is necessary to etch an SiO.sub.2 layer on a monocrystalline silicon substrate to make the surface of the monocrystalline silicon substrate flat.
However, in the conventional methods, as shown in FIG. 5, an
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