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In semiconductor devices, fin field effect transistors (finFETs) are emerging as a next generation technology due to their superior electrostatic control of short-channel effects over conventional planar transistors. In a finFET, the semiconductor fins are formed and function as the conducting channels of the device. In conventional silicon (Si) finFET devices, the fins are formed by etching trenches into the silicon substrate and then forming a blanket layer of recessed Si fins.
In some finFET approaches, a gate electrode is fabricated over the fins and is separated from the fins by a thin gate dielectric layer. A thicker portion of the gate electrode occupies the top of the fin, and it has its sidewalls terminating at a lower portion of the gate dielectric layer. The remaining sidewall of the gate electrode is recessed down into the surrounding gate dielectric layer to form a “wrap-around” gate electrode.
The wrap-around gate electrode for the finFETs has been formed by chemical vapor deposition (CVD) of a poly-Si gate electrode at a tilt angle to the gate dielectric layer to form a portion of the sidewalls that extend under the top portion of the gate electrode to form
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