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The other day we were again on 24/7 free television in Brazil: we saw the musical of Avenida Brasil on Globo. The show, which features the great recent hit.Semiconductor electronic components (e.g. transistors) are fabricated in batches (e.g. semiconductor wafers) having multiple identical electronic components. For example, a typical semiconductor wafer contains an array of 100, 200 or more identical integrated circuits (ICs). In particular, the dimensions of the transistors (e.g. the gate length, the spacing and the profile of the source/drain regions, the gate dielectric material thickness, etc.) are sized to drive the electronic component to a desired performance level (e.g., speed).
Typically, the electronic components are fabricated with different fabrication variables in the wafer. These fabrication variables may include the thickness of the gate dielectric material, the dosage of a doping material into the substrate (and/or into the source/drain regions), the location of a deep source/drain region, and the doping profile within the substrate (and/or within the source/drain regions). Additionally, each electronic component in the wafer may be fabricated with the same fabrication variables or with different fabrication variables.
The semiconductor wafer is cut (e.g. by a saw or a laser) into electronic components of the required configuration (i.e. an electronic component having the desired performance specifications). The cut pieces (i.e. semiconductor chips) are subjected to a heat treatment to activate the dopants in the substrate and the source/drain regions (e.g. silicon substrate or Si/SiGe). The heated pieces are then in-situ doped with boron or phosphorus so as to form p-type or n-type source/drain regions in the Si/SiGe substrate and/or in the undoped portions of the Si substrate. Subsequently, an inter-level dielectric (ILD) material (e.g. SiO2) is deposited over the substrate to serve as an interlayer dielectric (ILD). A conductive material is deposited, (e.g., by electro-chemical deposition (ECD) or sputtering) and patterned to form a metal gate. The metal gate (and any other conductive features) is then etched to form a gate electrode.
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